BFQ246 Datasheet, PDF (3/6 Pages) NXP Semiconductors – PNP video transistor

Philips Semiconductors
PNP video transistor
Product specification
BFQ246
−10³
handbook, halfpage
IC
(mA)
−10²
−10
−10
MBG511
−10²
VCE (V)
−10³
4
handbook, halfpage
Ptot
(W)
3
2
1
0
0
MBG512
100
Ts (^oC)
200
T_s = 60 °C.
Fig.2 DC SOAR.
V_CE ≤ −50 V.
Fig.3 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
P_tot = 3 W; up to T_s = 60 °C; note 1
Note
1. T_s is the temperature of the soldering point of the collector pin.
VALUE
38.5
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CER
V_(BR)EBO
I_CES
h_FE
f_T
C_re
collector-base breakdown voltage I_C = −0.1 mA; I_E = 0
collector-emitter breakdown voltage I_C = −1 mA; R_BE = 100 Ω
emitter-base breakdown voltage I_C = 0; I_E = −0.1 mA
collector-emitter leakage current V_CE = −50 V; V_BE = 0
DC current gain
I_C = −25 mA; V_CE = −10 V;
see Fig.4
transition frequency
I_C = −25 mA; V_CE = −10 V;
f = 500 MHz; see Fig.5
feedback capacitance
I_C = 0; V_CB = −10 V;
f = 1 MHz; see Fig.6
1996 Sep 04
3
MIN.
−100
−95
−3
−
20
TYP.
−
−
−
−
−
MAX.
−
−
−
−100
−
UNIT
V
V
V
µA
−
1
−
GHz
−
1.7
−
pF