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BFQ19 Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor | |||
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product speciï¬cation
BFQ19
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
30 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Cc
Ce
Cre
fT
GUM
F
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise ï¬gure
IE = 0; VCB = 10 V
IC = 70 mA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
IC = 70 mA; VCE = 10 V; f = 500 MHz
IC = 50 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
IC = 50 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
IC = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log -ï£ï£«---1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dB.
MIN. TYP. MAX. UNIT
â
â
100 nA
25 80 â
â
1.6 â
pF
â
5
â
pF
â
1.3 â
pF
4.4 5.5 â
â
11.5 â
GHz
dB
â
7.5 â
dB
â
3.3 â
dB
September 1995
3
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