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| BFQ18A Datasheet, PDF (3/6 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor | |||
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Philips Semiconductors
NPN 4 GHz wideband transistor
Product speciï¬cation
BFQ18A
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 155 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
20 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
hFE
DC current gain
IC = 100 mA; VCE = 10 V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz
dim
intermodulation distortion (see Fig.2) note 1
Note
1. Ic = 80 mA; VCE = 10 V; RL = 75 â¦;
Vp = Vo = 700 mV; fp =795.25 MHz;
Vq = Vo â6 dB; fq = 803.25 MHz;
Vr = Vo â6 dB; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz.
MIN.
25
â
â
â
â
â
TYP.
â
2
11
1.2
4
â60
UNIT
pF
pF
pF
GHz
dB
September 1995
3
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