BFQ162 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN video transistor

Philips Semiconductors
NPN video transistor
Product specification
BFQ162
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point T_s ≤ 115 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
20
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)CER
V_(BR)EBO
I_CES
h_FE
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter cut-off current
DC current gain
f_T
transition frequency
C_cb
collector-base capacitance
C_c
collector capacitance
CONDITIONS
I_C = 5 mA; I_E = 0
I_C = 10 mA; I_B = 0
I_C = 10 mA; R_BE = 100 Ω
I_E = 1 mA; I_C = 0
V_BE = 0 V; V_CE = 10 V
I_C = 300 mA; V_CE = 5 V;
T_amb = 25 °C; see Fig.4
I_C = 100 mA; V_CE = 5 V;
T_amb = 25 °C; see Fig.4
I_C = 300 mA; V_CE = 5 V;
f = 100 MHz; T_amb = 25 °C;
see Fig.6
I_C = i_c = 0; V_CB = 5 V; f = 1 MHz;
T_amb = 25 °C; see Fig.5
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
MIN. TYP. MAX. UNIT
20 −
−
V
10 −
−
V
19 −
−
V
3
−
−
V
−
−
100 µA
50 60 −
40 50 −
1
−
−
GHz
−
4.2 −
pF
−
5.8 −
pF
1997 Oct 02
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