BFG94 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 140 °C (note 1)
MIN. MAX. UNIT
−
15
V
−
12
V
−
2
V
−
60
mA
−
700 mW
−65 150 °C
−
175 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 140 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
50 K/W
September 1995
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