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BFG410W Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 22 GHz wideband transistor | |||
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Philips Semiconductors
NPN 22 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open emitter
open base
open collector
Ts ⤠110 °C; note 1; see Fig.2
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Product speciï¬cation
BFG410W
MIN.
â
â
â
â
â
â65
â
MAX.
10
4.5
1
12
54
+150
150
UNIT
V
V
V
mA
mW
°C
°C
VALUE
750
UNIT
K/W
handbook,6h0alfpage
Ptot
(mW)
40
MGD960
20
0
0
40
80
120
160
Ts (°C)
Fig.2 Power derating curve.
1998 Mar 11
3
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