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BFG31_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor
NXP Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 135 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
40 K/W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
Ccb
collector-base capacitance
Ceb
emitter-base capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain; note 1
Vo
Vo
Notes
output voltage
output voltage
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter; IC = 10 mA
20 

open base; IC = 10 mA
18 

open collector; IE = 0.1 mA 3 

IE = 0; VCB = 10 V


1
IC = 70 mA; VCE = 10 V;
25 

Tamb = 25 C
IC = 0; VCB = 10 V; f = 1 MHz; 
1.8 
IC = 0; VEB = 10 V; f = 1 MHz 
5

IC = 0; VCE = 10 V; f = 1 MHz; 
Tamb = 25 C
1.6 
IC = 70 mA; VCE = 10 V;

5

f = 500 MHz; Tamb = 25 C
IC = 70 mA; VCE = 10 V;

16 
f = 500 MHz; Tamb = 25 C
IC = 70 mA; VCE = 10 V;

12 
f = 800 MHz; Tamb = 25 C
note 2

600 
V
V
V
A
pF
pF
pF
GHz
dB
dB
mV
note 3

550 
mV
1.
GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log -----------------------s----2--1----2-----------------------
1 – s11 21 – s22 2
dB.
2. dim = 60 dB; IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 850.25 MHz;
Vq = Vo 6 dB; fq = 858.25 MHz;
Vr = Vo 6 dB; fr = 860.25 MHz;
measured at f(p+qr) = 848.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo = at dim = 60 dB; fp = 445.25 MHz;
Vq = Vo 6 dB; fq = 453.25 MHz;
Vr = Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.
1995 Sep 12
3