BFG16A Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN 2 GHz wideband transistor

Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFG16A
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-s}
PARAMETER
CONDITIONS
thermal resistance from junction up to T_s = 110 °C; note 1
to soldering point
Note
1. T_s is the temperature at the soldering point of the collector tab.
VALUE
40
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
C_c
C_e
C_re
f_T
G_UM
PARAMETER
CONDITIONS
collector-base breakdown
voltage
open emitter; I_C = 0.1 mA
collector-emitter breakdown
voltage
open base; I_C = 10 mA
emitter-base breakdown voltage open collector; I_E = 0.1 mA
collector cut-off current
I_E = 0; V_CB = 28 V
DC current gain
I_C = 150 mA; V_CE = 5 V
collector capacitance
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
emitter capacitance
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
feedback capacitance
I_C = 0; V_CB = 10 V; f = 1 MHz
transition frequency
I_C = 100 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 °C
maximum unilateral power gain I_C = 100 mA; V_CE = 10 V;
note 1
f = 500 MHz; T_amb = 25 °C
MIN. TYP. MAX. UNIT
25
−
−
V
18
−
−
V
3
−
−
V
−
−
20
µA
25
80
−
−
2.5 −
pF
−
10.0 −
pF
−
1.5 −
pF
−
1.5 −
GHz
−
10
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming
s₁₂
is zero.
G_UM
=
10
log -₍---1-----_–------s---₁--₁-----₂^s--₎-²---¹-₍--1-²----_–------s---₂---₂----₂---₎--
dB.
1995 Sep 12
3