BF824_15 Datasheet, PDF (3/6 Pages) NXP Semiconductors – PNP medium frequency transistor

NXP Semiconductors
PNP medium frequency transistor
Product data sheet
BF824
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−4
−25
−25
250
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_BE
base-emitter voltage
C_re
feedback capacitance
f_T
transition frequency
CONDITIONS
I_E = 0; V_CB = −30 V
I_C = 0; V_EB = −4 V
I_C = −1 mA; V_CE = −10 V
I_C = −4 mA; V_CE = −10 V
I_C = −4 mA; V_CE = −10 V
I_C = 0; V_CE = −10 V; f = 1 MHz
V_CE = −10 V; f = 100 MHz
I_C = −1 mA
I_C = −4 mA
I_C = −8 mA
MIN.
−
−
25
25
−
−
TYP.
−
−
45
50
−
−
MAX.
−50
−100
−
−
−900
0.3
UNIT
nA
nA
mV
pF
250 350 −
400 450 −
390 440 −
MHz
MHz
MHz
2004 Jan 16
3