BF821_BF823_15 Datasheet, PDF (3/6 Pages) NXP Semiconductors – PNP high-voltage transistors

NXP Semiconductors
PNP high-voltage transistors
Product data sheet
BF821; BF823
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BF821
BF823
V_CEO
collector-emitter voltage
BF821
BF823
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−300 V
−
−250 V
−
−300 V
−
−250 V
−
−5
V
−
−50 mA
−
−100 mA
−
−50 mA
−
250 mW
−65 +150 °C
−
150 °C
−65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector-base cut-off current
I_EBO
h_FE
V_CEsat
C_re
f_T
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
I_E = 0; V_CB = −200 V
I_E = 0; V_CB = −200 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −25 mA; V_CE = −20 V
I_C = −30 mA; I_B = −5 mA
I_C = I_c = 0; V_CB = −30 V; f = 1 MHz
I_C = −10 mA; V_CE = −10 V;
f = 100 MHz
MIN.
−
−
−
50
−
−
60
MAX.
−10
−10
−50
−
−800
1.6
−
UNIT
nA
µA
nA
mV
pF
MHz
2004 Jan 16
3