BF199 Datasheet, PDF (3/8 Pages) Motorola, Inc – RF Transistor

Philips Semiconductors
NPN medium frequency transistor
Product specification
BF199
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
40
25
4
25
25
500
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_BE
base-emitter voltage
C_re
feedback capacitance
f_T
transition frequency
CONDITIONS
I_E = 0; V_CB = 40 V
I_C = 0; V_EB = 4 V
I_C = 7 mA; V_CE = 10 V
I_C = 7 mA; V_CE = 10 V
I_C = 0; V_CB = 10 V; f = 1 MHz
I_C = 5 mA; V_CE = 10 V; f = 100 MHz
MIN.
−
−
38
−
−
−
TYP.
−
−
−
775
−
550
MAX. UNIT
100 nA
100 nA
−
925 mV
0.5 pF
−
MHz
1997 Jul 07
3