BDL31 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN BISS-transistor

Philips Semiconductors
NPN BISS-transistor
Product specification
BDL31
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
92
K/W
10
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
collector-emitter saturation
voltage
C_c
collector capacitance
f_T
transition frequency
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
I_E = 0; V_CB = 30 V
−
I_E = 0; V_CB = 30 V; T_j = 150 °C
−
I_C = 0; V_EB = 5 V
−
V_CE = 2 V; note 1
I_C = 0.5 A
200
I_C = 1 A
200
I_C = 3 A
150
I_C = 5 A
100
V_CE = 1 V; I_C = 2 A; note 1
180
note 1
I_C = 1 A; I_B = 20 mA
−
I_C = 2 A; I_B = 200 mA
−
I_C = 3 A; I_B = 60 mA
−
I_C = 5 A; I_B = 100 mA
−
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
−
I_C = 500 mA; V_CE = 10 V; f = 100 MHz 100
MAX.
50
50
50
UNIT
nA
µA
nA
−
−
−
−
−
180
mV
350
mV
450
mV
800
mV
130
pF
−
MHz
1999 Apr 28
3