BCV29 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN Darlington transistors

Philips Semiconductors
NPN Darlington transistors
Product specification
BCV29; BCV49
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
96
K/W
16
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
f_T
collector cut-off current
BCV29
BCV49
I_E = 0; V_CB = 30 V
I_E = 0; V_CB = 60 V
−
−
100 nA
−
−
100 nA
emitter cut-off current
I_C = 0; V_EB = 10 V
−
−
100 nA
DC current gain
BCV29
V_CE = 5 V; see Fig.2
I_C = 1 mA
4000 −
−
I_C = 10 mA
I_C = 100 mA
I_C = 500 mA
10000 −
−
20000 −
−
4000 −
−
DC current gain
BCV49
V_CE = 5 V; see Fig.2
I_C = 1 mA
I_C = 10 mA
2000 −
−
4000 −
−
I_C = 100 mA
I_C = 500 mA
collector-emitter saturation voltage I_C = 100 mA; I_B = 0.1 mA
10000 −
−
2000 −
−
−
−
1
V
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I_C = 100 mA; I_B = 0.1 mA
−
I_C = 10 mA; V_CE = 5 V
−
I_C = 30 mA; V_CE = 5 V; f = 100 MHz −
−
1.5
−
1.4
220 −
V
V
MHz
1999 Apr 08
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