BCV27 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN Darlington transistors

Philips Semiconductors
NPN Darlington transistors
Product specification
BCV27; BCV47
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
f_T
collector cut-off current
BCV27
BCV47
I_E = 0; V_CBO = 30 V
I_E = 0; V_CBO = 60 V
−
−
100 nA
−
−
100 nA
emitter cut-off current
I_E = 0; V_EB = 10 V
−
−
100 nA
DC current gain
BCV27
V_CE = 5 V; (see Fig.2)
I_C = 1 mA
4 000 −
−
I_C = 10 mA
I_C = 100 mA
10000 −
−
20000 −
−
DC current gain
V_CE = 5 V; (see Fig.2)
BCV47
I_C = 1 mA
I_C = 10 mA
I_C = 100 mA
2 000 −
−
4 000 −
−
10000 −
−
collector-emitter saturation voltage I_C = 100 mA; I_B = 0.1 mA
base-emitter saturation voltage I_C = 100 mA; I_B = 0.1 mA
base-emitter on-state voltage
I_C = 10 mA; V_CE = 5 V
−
−
1
V
−
−
1.5 V
−
−
1.4 V
transition frequency
I_C = 30 mA; V_CE = 5 V; f = 100 MHz −
220 −
MHz
1999 Apr 08
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