BCP68 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN medium power transistor

Philips Semiconductors
NPN medium power transistor
Product specification
BCP68
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
R_{th j-s}
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
91
K/W
10
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
C_c
f_T
hh----_{FF---EE---12-}
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BCP68-25
I_E = 0; V_CB = 25 V
I_E = 0; V_CB = 25 V; T_j = 150 °C
I_C = 0; V_EB = 5 V
I_C = 5 mA; V_CE = 10 V
I_C = 500 mA; V_CE = 1 V; see Fig.2
I_C = 1 A; V_CE = 1 V; see Fig.2
I_C = 500 mA; V_CE = 1 V; see Fig.2
collector-emitter saturation voltage I_C = 1 A; I_B = 100 mA
base-emitter voltage
I_C = 5 mA; V_CE = 10 V
I_C = 1 A; V_CE = 1 V
collector capacitance
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
transition frequency
I_C = 10 mA; V_CE = 5 V; f = 100 MHz
DC current gain ratio of the
complementary pairs
I_C = 0.5 A; V_CE = 1 V
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
50 −
85 −
60 −
100 nA
10 µA
100 nA
−
375
−
160 −
375
−
−
500 mV
−
620 −
mV
−
−
1
V
−
38 −
pF
40 −
−
MHz
−
−
1.6
1999 Apr 08
3