BCF32 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
BCF32
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
V_BE
base-emitter voltage
C_c
collector capacitance
f_T
transition frequency
F
noise figure
CONDITIONS
MIN.
I_E = 0; V_CB = 32 V
−
I_E = 0; V_CB = 32 V; T_j = 100 °C
−
I_C = 0; V_EB = 5 V
−
I_C = 10 µA; V_CE = 5 V
−
I_C = 2 mA; V_CE = 5 V
200
I_C = 10 mA; I_B = 0.5 mA
−
I_C = 50 mA; I_B = 2.5 mA
−
I_C = 10 mA; I_B = 0.5 mA
−
I_C = 50 mA; I_B = 2.5 mA
−
I_C = 2 mA; V_CE = 5 V
550
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
I_C = 10 mA; V_CE = 5 V; f = 100 MHz 100
I_C = 200 µA; V_CE = 5 V; R_S = 2 kΩ; −
f = 1 kHz; B = 200 Hz
TYP.
−
−
−
150
−
120
210
750
850
−
2.5
−
1.2
MAX. UNIT
100 nA
10
µA
100 nA
−
450
250 mV
−
mV
−
mV
−
mV
700 mV
−
pF
−
MHz
4
dB
1999 Apr 22
3