BC856T Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Product specification
BC856T; BC857T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
C_c
C_e
f_T
F
collector cut-off current
I_E = 0; V_CB = −30 V
−
−
I_E = 0; V_CB = −30 V; T_j = 150 °C
−
−
emitter cut-off current
I_C = 0; V_EB = −5 V
−
−
DC current gain
I_C = −2 mA; V_CE = −5 V
BC856AT; BC857AT
125 −
BC856BT; BC857BT
220 −
BC857CT
420 −
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
−
I_C = −100 mA; I_B = −5 mA; note 1
−
−
base-emitter voltage
I_C = −2 mA; V_CE = −5 V
−600 −
I_C = −10 mA; V_CE = −5 V
−
−
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
−
emitter capacitance
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz −
10
transition frequency
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 100 −
noise figure
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ; −
−
f = 1 kHz; B = 220 Hz
−15 nA
−5 µA
−100 nA
250
475
800
−200
−400
−750
−820
2.5
−
−
10
mV
mV
mV
mV
pF
pF
MHz
dB
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
1999 Apr 26
3