BC368 Datasheet, PDF (3/8 Pages) Motorola, Inc – Amplifier Transistors

Philips Semiconductors
NPN medium power transistor
Product specification
BC368
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
150
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
f_T
hh----_{FF---EE---12-}
collector cut-off current
I_E = 0; V_CB = 25 V
−
I_E = 0; V_CB = 25 V; T_j = 150 °C
−
emitter cut-off current
I_C = 0; V_EB = 5 V
−
DC current gain
I_C = 5 mA; V_CE = 10 V
50
I_C = 500 mA; V_CE = 1 V; see Fig.2 85
I_C = 1 A; V_CE = 1 V; see Fig.2
60
collector-emitter saturation voltage I_C = 1 A; I_B = 100 mA
−
base-emitter voltage
I_C = 5 mA; V_CE = 10 V
−
I_C = 1 A; V_CE = 1 V
−
transition frequency
I_C = 10 mA; V_CE = 5 V; f = 100 MHz 40
DC current gain ratio of the
I_C = 500 mA; V_CE = 1 V
−
complementary pairs
MAX.
100
10
100
−
375
−
500
700
1
−
1.6
UNIT
nA
µA
nA
mV
mV
V
MHz
1999 Apr 26
3