BB212 Datasheet, PDF (3/6 Pages) NXP Semiconductors – AM variable capacitance double diode

Philips Semiconductors
AM variable capacitance double diode
Product specification
BB212
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per diode
I_R
reverse current
r_s
diode series resistance
C_d
diode capacitance
C--C---_{d--d--(-(-0-8-.-5-V--V-)--)-}
capacitance ratio
V_R = 10 V; see Fig.3
V_R = 10 V; T_j = 85 °C; see Fig.3
f = 500 MHz; note 1
see Figs 2 and 4
V_R = 0.5 V; f = 1 MHz
V_R = 3 V; f = 1 MHz
V_R = 5.5 V; f = 1 MHz
V_R = 8 V; f = 1 MHz
f = 1 MHz
Note
1. V_R is the value at which C_d = 500 pF.
MIN. TYP. MAX. UNIT
−
−
−
−
500 −
140 −
40 −
−
−
22.5 −
50 nA
300 nA
2.5 Ω
620 pF
280 pF
90 pF
22 pF
−
MATCHING PROPERTIES
The capacitance of the two diodes in their common
package may differ within certain limits. The total, relative
capacitance difference between the two diodes in one
package may be found in Fig.5. The anode a1 or a2 with
the higher capacitance at V_R = 3 V, is identified by a white
dot.
BASIC TOLERANCE
The relative deviation of the capacitance value at
V_R = 0.5 V is maximum 3.5%.
k = -C----¹----⁽---0---.-5-C---V-₂---⁾-₍---0-^–--.--5C-----²_V----⁽-₎-0----.-5------V----⁾-- = <3.5%
ADDITIONAL TOLERANCE (see Fig.5)
In the range of V_R = 0.5 V to 8 V the following additional
tolerances are valid.
S=



CC-----_12-



V_R
–



CC-----_12-



0.5
V
S < 2% for V_R = 0.5 to 3 V
S < 4% for V_R = 3 to 5.5 V
S < 6% for V_R = 5.5 to 8 V.
C₁ is the capacitance of a1 when a1 > a2.
C₁ is the capacitance of a2 when a2 > a1.
1996 May 03
3