BAW101_15 Datasheet, PDF (3/9 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SWITCHING DIODE

NXP Semiconductors
High voltage double diode
Product data sheet
BAW101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
V_R
continuous reverse voltage
V_RRM
repetitive peak reverse voltage
I_F
continuous forward current
I_FRM
I_FSM
P_tot
T_stg
T_j
T_amb
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
−
series connection
−
−
series connection
−
single diode loaded; note 1; see Fig.2 −
double diode loaded; note 1; see Fig.2 −
−
square wave; T_j = 25 °C prior to surge; −
t = 1 µs
T_amb = 25 °C; note 1
−
−65
−
−65
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm².
MAX.
300
600
300
600
250
140
625
4.5
350
+150
150
+150
UNIT
V
V
V
V
mA
mA
mA
A
mW
°C
°C
°C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
V_BR(R)
V_F
I_R
reverse breakdown voltage
forward voltage
reverse current
t_rr
reverse recovery time
C_d
diode capacitance
I_R = 100 µA
300
I_F = 100 mA; note 1
−
V_R = 250 V
−
V_R = 250 V; T_amb = 150 °C
−
when switched from I_F = 30 mA to I_R = 30 mA; −
R_L = 100 Ω; measured at I_R = 3 mA
V_R = 0 V; f = 1 MHz
−
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
MAX.
−
1.1
150
50
50
2
UNIT
V
V
nA
µA
ns
pF
2003 May 13
3