BAV23S Datasheet, PDF (3/8 Pages) NXP Semiconductors – General purpose double diode

Philips Semiconductors
General purpose double diode
Product specification
BAV23S
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
V_F
forward voltage
V_F
forward voltage
I_R
reverse current
I_R
reverse current
C_d
diode capacitance
t_rr
reverse recovery time
CONDITIONS
MAX.
UNIT
see Fig.3
I_F = 100 mA
1.0
V
I_F = 200 mA
1.25
V
series connection; see Fig.3
I_F = 100 mA
2.0
V
I_F = 200 mA
2.5
V
see Fig.5
V_R = 200 V
100
nA
V_R = 200 V; T_j = 150 °C
100
mA
series connection
V_R = 400 V
100
nA
V_R = 400 V; T_j = 150 °C
100
mA
f = 1 MHz; V_R = 0; see Fig.6
5
pF
when switched from I_F = 30 mA to 50
ns
I_R = 30 mA; R_L = 100 Ω; measured
at I_R = 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
360
500
UNIT
K/W
K/W
1999 May 05
3