BAT54CM_15 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Schottky barrier double diode

NXP Semiconductors
Schottky barrier double diode
Product data sheet
BAT54CM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
V_R
continuous reverse voltage
I_F
continuous forward current
I_FRM
repetitive peak forward current
t_p ≤ 1 s; δ ≤ 0.5
I_FSM
non-repetitive peak forward current t_p < 10 ms
T_stg
storage temperature
T_j
junction temperature
P_tot
total power dissipation (per package) T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−65
−
−
MAX.
30
200
300
600
+150
150
250
Note
1. Refer to SOT883 standard mounting conditions (footprint); FR4 with 60 μm copper strip line.
UNIT
V
mA
mA
mA
°C
°C
mW
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to
ambient
CONDITIONS
note 1
VALUE
500
Note
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
UNIT
K/W
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
V_F
forward voltage
I_R
continuous reverse current
C_d
diode capacitance
Note
1. Pulsed test: t_p ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MAX.
UNIT
see Fig.2;
I_F = 0.1 mA
240
mV
I_F = 1 mA
320
mV
I_F = 10 mA
400
mV
I_F = 30 mA
500
mV
I_F = 100 mA
800
mV
V_R = 25 V; note 1; see Fig.3
2
μA
f = 1 MHz; V_R = 1 V; see Fig.4 10
pF
2003 Nov 11
3