BAT17_15 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Schottky barrier diode

NXP Semiconductors
Schottky barrier diode
Product data sheet
BAT17
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
r_D
diode forward resistance
C_d
diode capacitance
F
noise figure
CONDITIONS
see Fig.2
I_F = 0.1 mA
I_F = 1 mA
I_F = 10 mA
V_R = 3 V; see Fig.3
V_R = 3 V; T_amb = 60 °C; see Fig.3
f = 1 kHz; I_F = 5 mA
f = 1 MHz; V_R = 0; see Fig.4
f = 900 MHz; note 1
MAX.
UNIT
350
mV
450
mV
600
mV
0.25
μA
1.25
μA
15
Ω
1
pF
8
dB
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise F_if = 1.5 dB; f = 35 MHz.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT23 standard mounting conditions.
CONDITIONS
VALUE
500
UNIT
K/W
2003 Mar 25
3