 English |
|
|
|
|
|
|
|
| BAT160_15 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
| |||
| ◁ |
NXP Semiconductors
Schottky barrier double diodes
Product data sheet
BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward current
IRSM
Tstg
Tj
non-repetitive peak reverse current
storage temperature
junction temperature
tp = 8.3 ms; half sinewave;
JEDEC method
tp = 100 μs
MIN. MAX. UNIT
â
60
V
â
1
A
â
10
A
â
0.5
A
â65 +150 °C
â
150 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
CONDITIONS
MAX.
UNIT
see Fig.5
IF = 100 mA
400
mV
IF = 1 A
650
mV
IF = 2 A
850
mV
VR = 60 V; note 1; see Fig.6
350
μA
VR = 60 V; Tj = 100 °C; note 1; 8
mA
see Fig.6
f = 1 MHz; VR = 4 V; see Fig 7 60
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1999 Sep 20
3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese