BAT140 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier double diodes

Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
V_R
I_F
I_F(AV)
I_FSM
continuous reverse voltage
continuous forward current
average forward current
non-repetitive peak forward current
T_amb = 65 °C;
R_{th j-a} = 80 K/W; note 1;
V_R(equiv) = 0.2 V; note 2
t = 8.3 µs half sinewave;
JEDEC method
I_RSM
non-repetitive peak reverse current t_p = 100 µs
T_stg
storage temperature
T_j
junction temperature
−
40
V
−
1
A
−
1
A
−
10
A
−
0.5
A
−65
+150 °C
−
125
°C
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P_R are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P_R and I_F(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
Note
1. Pulsed test: t_p = 300 µs; δ = 0.02.
CONDITIONS
see Fig.5
I_F = 100 mA; note 1
I_F = 1 A; note 1
V_R = 10 V; note 1; see Fig.6
V_R = 40 V; note 1; see Fig.6
V_R = 4 V; f = 1 MHz; see Fig.7
TYP. MAX. UNIT
280
330
mV
460
500
mV
15
40
µA
60
300
µA
65
80
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1997 Oct 03
3