BAT120 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier double diodes

Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
V_R
continuous reverse voltage
I_F
continuous forward current
I_FSM
non-repetitive peak forward current
I_RSM
T_stg
T_j
T_amb
non-repetitive peak reverse current
storage temperature
junction temperature
operating ambient temperature
t_p < 10 ms; half sinewave;
JEDEC method
t_p = 100 µs
MIN. MAX. UNIT
−
25
V
−
1
A
−
10
A
−
0.5
A
−65 +150 °C
−
125 °C
−65 +125 °C
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
Note
1. Pulse test: t_p = 300 µs; δ = 0.02.
CONDITIONS
TYP. MAX. UNIT
see Fig.5
I_F = 100 mA
260 300 mV
I_F = 1 A
400 450 mV
V_R = 20 V; note 1; see Fig.6
80
500 µA
V_R = 25 V; note 1; see Fig.6
−
1
mA
V_R = 20 V; T_j = 100 °C; note 1 −
10
mA
f = 1 MHz; V_R = 4 V; see Fig.7 100 −
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1998 Oct 30
3