BAS678 Datasheet, PDF (3/7 Pages) NXP Semiconductors – High-speed diode

Philips Semiconductors
High-speed diode
Product specification
BAS678
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
t_rr
reverse recovery time
V_fr
forward recovery voltage
CONDITIONS
see 3; I_F = 200 mA; d.c.; note 1
see Fig.5
V_R = 10 V
V_R = 75 V
V_R = 75 V; T_j = 150 °C
f = 1 MHz; V_R = 0; see Fig.6
when switched from I_F = 400 mA to
I_R = 400 mA; R_L = 100 Ω;
measured at I_R = 40 mA; see Fig.7
when switched from I_F = 10 mA;
t_r = 20 ns; see Fig.8
MIN.
−
−
−
−
−
−
−
MAX. UNIT
1.0 V
15 nA
100 nA
50 µA
2 pF
6 ns
2V
Note
1. T_amb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
1996 Sep 10
3