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BAS45A Datasheet, PDF (3/6 Pages) NXP Semiconductors – Low-leakage diode
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Philips Semiconductors
Low-leakage diode
Product specification
BAS45A
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
CONDITIONS
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 100 mA
see Fig.5
VR = 125 V; Emax = 100 lx
VR = 30 V; Tj = 125 °C; Emax = 100 lx
VR = 125 V; Tj = 125 °C; Emax = 100 lx
VR = 125 V; Tj = 150 °C; Emax = 100 lx
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
TYP.
−
−
−
−
−
−
−
−
1.5
MAX. UNIT
780 mV
860 mV
1000 mV
1 nA
300 nA
500 nA
2 µA
4 pF
− µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point 8 mm from the body
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed-circuit board without metallization pad.
VALUE
300
500
UNIT
K/W
K/W
1996 Mar 13
3
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