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BAP64LX_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Silicon PIN diode
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NXP Semiconductors
7. Characteristics
Table 6. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 100 mA
IR
reverse current
VR = 100 V
Cd
diode capacitance
see Figure 2; f = 1 MHz;
VR = 0 V
VR = 1 V
VR = 20 V
rD
diode forward resistance see Figure 3; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
ISL
isolation
see Figure 4; VR = 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 5; IF = 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 5; IF = 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 5; IF = 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 5; IF = 100 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
charge carrier life time when switched from IF = 10 mA to
IR = 6 mA; RL = 100 ; measured at
IR = 3 mA
LS
series inductance
IF = 100 mA; f = 100 MHz
BAP64LX
Silicon PIN diode
Min Typ Max Unit
-
0.95 1.1
V
-
-
100 nA
-
0.48 -
pF
-
0.34 -
pF
-
0.17 0.30 pF
-
31
50

-
16
26

-
2.6
4.4

-
0.9
1.5

-
22
-
dB
-
16
-
dB
-
14
-
dB
-
1.22 -
dB
-
1.21 -
dB
-
1.22 -
dB
-
0.22 -
dB
-
0.23 -
dB
-
0.24 -
dB
-
0.12 -
dB
-
0.14 -
dB
-
0.15 -
dB
-
0.09 -
dB
-
0.10 -
dB
-
0.11 -
dB
-
1.0
-
s
-
0.4
-
nH
BAP64LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 12 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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