BA278 Datasheet, PDF (3/5 Pages) NXP Semiconductors – Band-switching diode

Philips Semiconductors
Band-switching diode
Preliminary specification
BA278
GRAPHICAL DATA
10
handbook, halfpage
Cd
(pF)
1
MGL433
2.5
handbook, halfpage
rD
(Ω)
2.0
1.5
1.0
MGL432
10^−1
1
10
10²
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.2 Diode capacitance as a function of reverse
voltage; typical values.
0.5
0
10^−1
1
10
IF (mA)
f = 100 MHz; T_j = 25 °C.
Fig.3 Diode forward resistance as a function of
forward current; typical values.
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
A
c
HE
vM A
SOD523V
Package under
development
Philips Semiconductors reserves the
right to make changes without notice.
D
1
E bp
(1)
OUTLINE
VERSION
IEC
SOD523V
A
2
REFERENCES
JEDEC
EIAJ
SC-79
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
bp
c
D
E
HE
v
mm
0.65 0.34 0.17 1.25 0.85 1.65
0.58 0.26 0.11 1.15 0.75 1.55
0.1
Note
1. The marking bar indicates the cathode.
EUROPEAN
PROJECTION
ISSUE DATE
00-12-07
2001 Jan 15
3