AN11102 Datasheet, PDF (3/12 Pages) NXP Semiconductors – BFU725F/N1 2.4 GHz LNA evaluation board

NXP Semiconductors
AN11102
BFU725F/N1_2.4GHz LNA EVB
1. Introduction
The BFU725F/N1 is a wideband Silicon Germanium Amplifier transistor for high speed,
low noise applications. It is designed to be used for LNA applications up to 15 GHz like
GPS, Satellite radio, Cordless Phone, Wireless LAN and satellite LNB. The BFU725F/N1
comes in a SOT343F package that has 2-emitter pins to reduce emitter inductance (for
maximum gain).
The BFU725F/N1 is ideal in all kind of applications where cost matters. It also gives the
designer flexibility in his design work, like bias current, frequency of operation; optimize
for the parameter of interest e.g. noise; gain; IP3 etc
The 2.4GHz LNA evaluation board (EVB) is designed to evaluate the performance of the
BFU725F/N1 applied as a general ISM band LNA in the 2.4GHz range. In this document,
the application diagram, board layout, bill of material, and some typical results are given.
Fig 1 shows the evaluation board.
AN11102
Application note
Fig 1. BFU725F/N1 2.4GHz LNA evaluation board
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 July 2011
© NXP B.V. 2011. All rights reserved.
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