2PC1815 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
2PC1815
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
h_FE
V_CEsat
V_BEsat
C_c
f_T
F
collector cut-off current
I_E = 0; V_CB = 60 V
−
−
emitter cut-off current
I_C = 0; V_EB = 5 V
−
−
DC current gain
I_C = 150 mA; V_CE = 6 V
25
−
DC current gain
I_C = 2 mA; V_CE = 6 V
2PC1815
120 −
2PC1815Y
120 −
2PC1815GR
200 −
2PC1815BL
350 −
collector-emitter saturation voltage I_C = 100 mA; I_B = 10 mA
−
−
base-emitter saturation voltage
I_C = 100 mA; I_B = 10 mA
−
−
collector capacitance
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
2.5
transition frequency
I_C = 1 mA; V_CE = 6 V; f = 100 MHz 80
−
noise figure
I_C = 200 µA; V_CE = 5 V;
R_S = 2 k Ω; f = 1 kHz
−
−
100 nA
100 nA
−
700
240
400
700
300 mV
1.1 V
3.5 pF
−
MHz
10
dB
1999 May 28
3