2PB710A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistor

Philips Semiconductors
PNP general purpose transistor
Product specification
2PB710A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
f_T
collector cut-off current
emitter cut-off current
DC current gain
2PB710AQ
I_E = 0; V_CB = −60 V
I_E = 0; V_CB = −60 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −150 mA; V_CE = −10 V; note 1
2PB710AR
2PB710AS
DC current gain
I_C = −500 mA; V_CE = −10 V; note 1
collector-emitter saturation voltage I_C = −300 mA; I_B = −30 mA; note 1
base-emitter saturation voltage I_C = −300 mA; I_B = −30 mA; note 1
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
transition frequency
2PB710AQ
I_C = −50 mA; V_CE = −10 V;
f = 100 MHz; note 1
2PB710AR
2PB710AS
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
MIN.
−
−
−
MAX.
−10
−5
−10
UNIT
nA
µA
nA
85
170
120
240
170
340
40
−
−
−600 mV
−
−1.5
V
−
15
pF
100
−
120
−
140
−
MHz
MHz
MHz
1999 May 31
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