2N5088 Datasheet, PDF (3/8 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

Philips Semiconductors
NPN general purpose transistor
Product specification
2N5088
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
35
30
4.5
100
200
200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
C_c
C_e
f_T
F
collector cut-off current
I_E = 0; V_CB = 20 V
−
emitter cut-off current
I_C = 0; V_EB = 4.5 V
−
DC current gain
I_C = 100 µA; V_CE = 5 V
300
I_C = 1 mA; V_CE = 5 V
350
I_C = 10 mA; V_CE = 5 V
300
collector-emitter saturation voltage I_C = 10 mA; I_B = 1 mA
−
base-emitter voltage
I_C = 10 mA; V_CE = 5 V
−
collector capacitance
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
−
emitter capacitance
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
transition frequency
I_C = 500 µA; V_CE = 5 V; f = 100 MHz 50
noise figure
I_C = 200 µA; V_CE = 5 V; R_S = 2 kΩ; −
f = 10 Hz to 15.7 kHz
MAX.
50
50
900
−
−
500
800
4
12
−
3
UNIT
nA
nA
mV
mV
pF
pF
MHz
dB
1997 Sep 03
3