2N4403 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Philips Semiconductors
PNP switching transistor
Product specification
2N4403
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I_E = 0 mA; V_CB = −40 V
−
I_C = 0 mA; V_EB = −5 V
−
V_CE = −1 V; see Fig.2
I_C = −0.1 mA
30
I_C = −1 mA
60
I_C = −10 mA
100
V_CE = −2 V
I_C = −150 mA
100
I_C = −500 mA
20
I_C = −150 mA; I_B = −15 mA
−
I_C = −500 mA; I_B = −50 mA
−
I_C = −150 mA; I_B = −15 mA
−
I_C = −500 mA; I_B = −50 mA
−
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz −
I_C = −20 mA; V_CE = −10 V; f = 100 MHz 200
Switching times (between 10% and 90% levels); see Fig.3
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = −150 mA; I_Bon = −15 mA;
−
I_Boff = 15 mA
−
−
−
−
−
MAX.
−50
−50
−
−
−
300
−
−400
−750
−950
−1.3
8.5
30
−
40
15
30
350
300
50
UNIT
nA
nA
mV
mV
mV
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
1999 Apr 23
3