2N4124 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
2N4124
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
25
5
200
300
100
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_CEsat
V_BEsat
C_c
C_e
f_T
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
I_E = 0; V_CB = 20 V
I_C = 0; V_EB = 3 V
I_C = 2 mA; V_CE = 1 V; note 1
I_C = 50 mA; V_CE = 1 V; note 1
I_C = 50 mA; I_B = 5 mA; note 1
I_C = 50 mA; I_B = 5 mA; note 1
I_E = i_e = 0; V_CB = 5 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = 10 mA; V_CE = 20 V; f = 100 MHz
I_C = 100 µA; V_CE = 5 V; R_S = 1 kΩ
f = 10 Hz to 15.7 kHz
MIN.
−
−
120
60
−
−
−
−
300
−
MAX.
50
50
360
−
300
950
4
8
−
5
UNIT
nA
nA
mV
mV
pF
pF
MHz
dB
1997 Mar 25
3