2N4036 Datasheet, PDF (3/8 Pages) Motorola, Inc – CASE 79.04, STYLE 1 TO-39 (TO-205AD)

Philips Semiconductors
PNP switching transistor
Product specification
2N4036
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_mb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−55
−
−55
MAX.
−90
−65
−7
−1
−1
−500
7
+200
200
+200
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-c}
thermal resistance from junction to case in free air
VALUE
25
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
C_c
f_T
collector cut-off current
I_E = 0; V_CB = −60 V
−
I_E = 0; V_CB = −60 V; T_amb = 150 °C
−
emitter cut-off current
I_C = 0; V_EB = −4 V
−
DC current gain
I_C = −0.1 mA; V_CE = −10 V
20
I_C = −150 mA; V_CE = −2 V
20
I_C = −150 mA; V_CE = −10 V
40
I_C = −150 mA; V_CE = −10 V;
20
T_amb = 55 °C
collector-emitter saturation voltage I_C = −150 mA; I_B = −15 mA
−
base-emitter saturation voltage
I_C = −150 mA; I_B = −15 mA
−
base-emitter on-stage voltage
I_C = −150 mA; V_CE = −10 V
−
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
transition frequency
I_C = −50 mA; V_CE = −10 V; f = 100 MHz 60
Switching times (between 10% and 90% levels)
t_on
turn-on time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = −150 mA; I_Bon = −15 mA;
−
I_Boff = 15 mA
−
−
−
−
MAX.
−50
−5
−50
−
200
140
−
UNIT
nA
µA
nA
−650
−1.4
−1.5
30
−
mV
V
V
pF
MHz
110
ns
70
ns
700
ns
600
ns
100
ns
1997 Jun 19
3