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| 1PS70SB16_15_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Dual Schottky barrier diode | |||
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NXP Semiconductors
1PS70SB16
Dual Schottky barrier diode
Symbol
Tstg
Parameter
storage temperature
Conditions
Min Max Unit
-65 150 °C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1]
-
-
625 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Conditions
IF = 0.1 mA; Tamb = 25 °C
IF = 1 mA; Tamb = 25 °C
IF = 10 mA; Tamb = 25 °C
IF = 30 mA; Tamb = 25 °C
IF = 100 mA; Tamb = 25 °C
VR = 25 V; pulsed; tp = 300 µs;
δ = 0.02 ; Tamb = 25 °C
VR = 1 V; f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
-
-
240 mV
-
-
320 mV
-
-
400 mV
-
-
500 mV
-
-
800 mV
-
-
2
µA
-
-
10
pF
1PS70SB16
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 December 2012
© NXP B.V. 2012. All rights reserved
3/9
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