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| 1PS59SB21 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier diode | |||
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Philips Semiconductors
Schottky barrier diode
Product speciï¬cation
1PS59SB21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
MIN.
see Fig.2
IF = 10 mA
â
IF = 100 mA
â
IF = 200 mA
â
VR = 30 V; note 1; see Fig.3
â
VR = 30 V; Tj = 100 °C; note 1; see Fig.3 â
f = 1 MHz; VR = 0; see Fig.4
40
MAX.
300
420
550
15
3
50
UNIT
mV
mV
mV
µA
mA
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SC-59 standard mounting conditions.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
1999 May 05
3
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