1PS184 Datasheet, PDF (3/6 Pages) NXP Semiconductors – High-speed double diode

Philips Semiconductors
High-speed double diode
Product specification
1PS184
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per diode
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
t_rr
reverse recovery time
V_fr
forward recovery voltage
CONDITIONS
TYP. MAX. UNIT
see Fig.3
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
610
− mV
740
− mV
−
1.0 V
I_F = 100 mA
−
1.2 V
see Fig.4
V_R = 25 V
−
30 nA
V_R = 80 V
V_R = 25 V; T_j = 150 °C
V_R = 80 V; T_j = 150 °C
−
0.5 µA
−
30 µA
−
100 µA
f = 1 MHz; V_R = 0; see Fig.5
−
when switched from I_F = 10 mA to
−
I_R = 10 mA; R_L = 100 Ω;
measured at I_R = 1 mA; see Fig.6
1.5 pF
4 ns
when switched from I_F = 10 mA;
−
t_r = 20 ns; see Fig.7
1.75 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
250
500
UNIT
K/W
K/W
1996 Sep 03
3