1N4001G Datasheet, PDF (3/5 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

Philips Semiconductors
Rectifiers
Product specification
1N4001G to 1N4007G
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_F
V_F(AV)
I_R
forward voltage
full-cycle average forward voltage
reverse current
I_R(AV)
full-cycle average reverse current
CONDITIONS
I_F = 1 A; see Fig.3
I_F(AV) = 1 A
V_R = V_Rmax
V_R = V_Rmax; T_amb = 100 °C
V_R = V_RRMmax; T_amb = 75 °C
MAX.
1.1
0.8
10
50
30
UNIT
V
V
µA
µA
µA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
100
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.4.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
3