TDA8920B Datasheet, PDF (25/34 Pages) NXP Semiconductors – 2 X 100 W class-D power amplifier

Philips Semiconductors
TDA8920B
2 × 100 W class-D power amplifier
200
P_o
(W)
160
120
80
40
001aab237
(1)
(2)
(3)
(4)
240
P_o
(W)
160
80
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(1)
(2)
(3)
(4)
0
10
15
20
25
30
35
V_S (V)
f = 1 kHz.
(1) 1 × 6 Ω BTL configuration.
(2) 1 × 8 Ω BTL configuration.
(3) 2 × 3 Ω SE configuration.
(4) 2 × 4 Ω SE configuration.
Fig 22. Output power as a function of supply voltage;
THD + N = 0.5 %.
0
10
15
20
25
30
35
V_S (V)
f = 1 kHz.
(1) 1 × 6 Ω BTL configuration.
(2) 1 × 8 Ω BTL configuration.
(3) 2 × 3 Ω SE configuration.
(4) 2 × 4 Ω SE configuration.
Fig 23. Output power as a function of supply voltage;
THD + N = 10 %.
45
G
(dB)
40
35
30
25
001aab239
(1)
(2)
(3)
(4)
45
G
(dB)
40
35
30
25
001aab240
(1)
(2)
(3)
(4)
20
10
10²
10³
10⁴
10⁵
f (Hz)
V_i = 100 mV; R_s = 5.6 kΩ; C_i = 330 pF; V_p = ±27 V.
(1) 1 × 8 Ω BTL configuration.
(2) 1 × 6 Ω BTL configuration.
(3) 2 × 4 Ω BTL configuration.
(4) 2 × 3 Ω BTL configuration.
Fig 24. Gain as a function of frequency; R_S = 5.6 kΩ
and C_i = 330 pF.
20
10
10²
10³
10⁴
10⁵
f (Hz)
V_i = 100 mV; R_s = 0 Ω; C_i = 330 pF; V_p = ±27 V.
(1) 1 × 8 Ω BTL configuration.
(2) 1 × 6 Ω BTL configuration.
(3) 2 × 4 Ω BTL configuration.
(4) 2 × 3 Ω BTL configuration.
Fig 25. Gain as a function of frequency; R_S = 0 Ω and
C_i = 330 pF.
9397 750 13356
Preliminary data sheet
Rev. 01 — 1 October 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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