SA2410 Datasheet, PDF (2/6 Pages) NXP Semiconductors – 2.45GHz RF power amplifier and T/R switch

Philips Semiconductors
2.45GHz RF power amplifier and T/R switch
Preliminary specification
SA2410
DESCRIPTION
The SA2410 is a GaAs monolithic power amplifier with an integrated
T/R switch designed to meet requirements for 802.11 (WLAN). The
SA2410 uses an on–chip 4 GHz oscillator to generate the negative
bias, thus eliminating the need for a negative supply. It operates
from 3V to 5.5V and consumes 125 mA with an output power of 18.5
dB (typ). It is suitable for other 2.45 GHz ISM band applications.
FEATURES
• V_CC=3V–5.5V
• No negative bias needed
• I_CC=125mA (typ) @ 3.3V
• P_OUT=18.5 dB(typ)
IM3<–30dBc
IM5<–50dBc
• Gain=29dB (typ)
• Attenuation range=16dB (typ)
• LQFP–32 package
APPLICATIONS
• 802.11 WLAN
• 2.4–2.5 GHz ISM BAND
V_D4 1
GND ²
V_D3 3
GND 4
V_GC1 5
V_GC2 ⁶
GND 7
SW_OUT1 8
32 31 30 29 28 2 26 25
24 _PAOUT
23 GND
26 _GND
21 GND
20 GND
19 GND
18 VG_PA
9 10
11 12 13 14 19 16
17 _VNEG
Figure 1. Pin Configuration
SR01422
ORDERING INFORMATION
DESCRIPTION
32–Pin Plastic Thin Quad Flat Package
GENERAL SPECIFICATIONS
Symbol
T
V_CC
I_CC
Power Amplifier
f_RF
IM3
IM5
T_on
T_off
Gain
Parameter
Temperature
Supply V
Supply I
Frequency Range
IM3 2 tones
IM5 2 tones
Transmit power on
Xmit power down
Small signal gain
P_out
Eff.
∆ Gt1
∆ Gt2
∆ Gr
∆ Gvd
Output power
Efficiency
Gain variation with temp
Gain variation with temp
Ripple
Gain variation with supply
TEMPERATURE RANGE
–40° C+85°C
ORDER CODE DWG #
SA2410
SOT401–1
Condition
3.3 volts
Including neg. supply
IM3=30dBc
IM5=50dBc
125mA@3.3 volts
–40 to +85°C
0–70°C
2.45"0.05 GHz
3.3 volts"0.3 V
Min
Typ
Max
–40
+85
3
5.5
125
2.4
2.5
30
50
2
2
29
17.5
18.5
25
"3.5
"2.0
"1
0.5
Unit
C
V
mA
GHz
dBc
dBc
µs
µs
dB
dBm
%
dB
dB
dB
dB
1997 Sep 09
2