PZTA06 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
PZTA06
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 80 V).
APPLICATIONS
• Medium power switching in e.g. telephony and
professional communication.
DESCRIPTION
NPN transistor in a SOT223 plastic package.
PNP complement: PZTA56.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
open base
T_amb ≤ 25 °C
I_C = 100 mA; V_CE = 1 V
I_C = 10 mA; V_CE = 2 V; f = 100 MHz
MIN.
−
−
−
−
100
100
MAX.
80
80
500
1.2
−
−
UNIT
V
V
mA
W
MHz
1997 Jul 14
2