PXTA14 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN Darlington transistor

Philips Semiconductors
NPN Darlington transistor
Product specification
PXTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• High input impedance preamplifiers.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complement: PXTA64.
MARKING
TYPE NUMBER
PXTA14
MARKING CODE
p1N
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
handbook, halfpage
3
2
TR1
TR2
1
2
3
Bottom view
1
MAM300
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
V_BE = 0
open collector
T_amb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
30
10
500
1
200
1.3
+150
150
+150
UNIT
V
V
V
mA
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm².
For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
1999 Apr 14
2