PMCXB900UE_15 Datasheet, PDF (2/20 Pages) NXP Semiconductors – 20 V, complementary N/P-channel Trench MOSFET

NXP Semiconductors
PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
[1] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm}²_.
Table 2. Pinning information
Pin
Symbol Description
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
7
D1
drain TR1
8
D2
drain TR2
Simplified outline
1
7
6
2
5
Graphic symbol
D1
G1
8
3
4
S1
Transparent top view
DFN1010B-6 (SOT1216)
D2
G2
S2
017aaa262
5. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMCXB900UE
DFN1010B-6
Description
DFN1010B-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
Version
SOT1216
6. Marking
Table 4. Marking codes
Type number
PMCXB900UE
MARKING CODE
(EXAMPLE)
Marking code
10 00 00
READING
DIRECTION
MARK-FREE AREA
PIN 1
INDICATION MARK
READING EXAMPLE:
11
01
10
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
aaa-007665
PMCXB900UE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 June 2015
YEAR DATE
CODE
© NXP Semiconductors N.V. 2015. All rights reserved
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