PMBD354_15 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Schottky barrier double diode

NXP Semiconductors
Schottky barrier double diode
Product data sheet
PMBD354
FEATURES
• Low forward voltage
• Small SMD package
• Low capacitance
• Matched capacitance.
PINNING
PIN
DESCRIPTION
1
cathode k₁
2
anode a₂
3
common connection a₁, k₂
APPLICATIONS
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection.
handbook, 2 columns
3
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
MARKING
TYPE NUMBER
PMBD354
MARKING
CODE⁽¹⁾
*V8
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
1
1
2
Top view
MGC421
2
MGC487
Fig.1 Simplified outline (SOT23) pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
V_R
I_F
T_stg
T_j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
MIN.
MAX.
UNIT
−
4
V
−
30
mA
−65
+150
°C
−
100
°C
2003 Mar 25
2