PLB16012U Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PLB16012U
FEATURES
• Input matching cell allows an easier
design of circuits
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common base class C
narrowband amplifier.
MODE OF
f
V_CC
P_L
G_p
η_C
OPERATION (GHz) (V) (W) (dB) (%)
Z_i; Z_L
(Ω)
Class C (CW)
1.6
28
10
>8
>45 see Figs 5
and 6
PINNING - SOT437A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
APPLICATIONS
Common base, class C, power
amplifiers at 1.6 GHz. Also suitable
for operation in the 1.4 to 1.8 GHz
range.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package with base connected
to flange.
handbook, 4 columns
1
Top view
3
2
c
b
e
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2