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| PHX6ND50E Datasheet, PDF (2/8 Pages) NXP Semiconductors – PowerMOS transistors FREDFET, Avalanche energy rated | |||
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Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHX6ND50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 4 A;
tp = 0.17 ms; Tj prior to avalanche = 25ËC;
VDD ⤠50 V; RGS = 50 â¦; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1 IAR = 5.9 A; tp = 1 µs; Tj prior to
avalanche = 25ËC; RGS = 50 â¦; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
280
10
5.9
UNIT
mJ
mJ
A
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ⤠65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN. TYP. MAX. UNIT
-
- 3.6 K/W
- 55 - K/W
1 pulse width and repetition rate limited by Tj max.
August 1998
2
Rev 1.100
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