 English |
|
|
|
|
|
|
|
| PHP5N20E Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor | |||
| |||
| ◁ |
Philips Semiconductors
PowerMOS transistor
Product specification
PHP5N20E
ELECTRICAL CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
âV(BR)DSS /
âTj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
IGSS
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Ld
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VGS = 10 V; ID = 2.5 A
VDS = VGS; ID = 0.25 mA
VDS = 50 V; ID = 2.5 A
VDS = 200 V; VGS = 0 V
VDS = 160 V; VGS = 0 V; Tj = 150 ËC
VGS = ±30 V; VDS = 0 V
ID = 4.8 A; VDD = 160 V; VGS = 10 V
VDD = 100 V; ID = 4.8 A;
RG = 18 â¦; RD = 20 â¦
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN.
200
-
-
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.25 - V/K
0.68 0.9 â¦
3.0 4.0 V
3.5
-
S
0.1 25 µA
1 250 µA
10 100 nA
11 15 nC
2
3
nC
5.3
7
nC
7
-
ns
29
-
ns
27
-
ns
22
-
ns
3.5
-
nH
4.5
-
nH
7.5
-
nH
300 -
pF
60
-
pF
20
-
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
Tmb = 25ËC
(body diode)
ISM
Pulsed source current (body Tmb = 25ËC
diode)
VSD
Diode forward voltage
IS = 5.2 A; VGS = 0 V
trr
Reverse recovery time
IS = 4.8 A; VGS = 0 V;
dI/dt = 100 A/µs
Qrr
Reverse recovery charge
MIN. TYP. MAX. UNIT
-
-
5
A
-
-
20
A
-
-
1.5 V
- 114 -
ns
-
0.8
-
µC
October 1997
2
Rev 1.100
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese